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(memory IC) K4X51163PK-FGD8 K9GAG08U0F-PCB0 GCS3F/LPX-7989 nand flash IC chip

Product Description

1.2pt solid #000000; height: 51pt; width: 154.5pt;" width="206" height="68">PART NUMBER Type Description MFR
K4X51163PK-FGD8 SDRM 32MX16 333 FBGA 60P 1.8V BK SAMSUNG
K9GAG08U0F-PCB0 NAND NAND 2GX8 30NS TSOP1 48P 2.7~3.6V SAMSUNG
GCS3F/LPX-7989 GPS chip GSC3F/LPX-7989 BGA 140P TP SIRF
    K4X51163PC - L(F)E/G  Mobile-DDR SDRAM   32M x16 Mobile-DDR SDRAM   FEATURES
• 1.8V power supply, 1.8V I/O power
• Double-data-rate architecture; two data transfers per clock cycle
• Bidirectional data strobe(DQS)
• Four banks operation
• 1 /CS
• 1 CKE
• Differential clock inputs(CK and CK)
• MRS cycle with address key programs
- CAS Latency ( 2, 3 )
- Burst Length ( 2, 4, 8, 16 )
- Burst Type (Sequential & Interleave)
- Partial Self Refresh Type ( Full, 1/2, 1/4 Array )
- Output Driver Strength Control ( Full, 1/2, 1/4, 1/8 )
• Internal Temperature Compensated Self Refresh
• Deep Power Down Mode
• All inputs except data & DM are sampled at the positive going edge of the system clock(CK).
• Data I/O transactions on both edges of data strobe, DM for masking.
• Edge aligned data output, center aligned data input.
• No DLL; CK to DQS is not synchronized.
• LDM, UDM for write masking only.
• Auto refresh duty cycle
- 7.8us for -25 to 85 °C         Package Dimension and Pin Configuration       K9GAG08U0M
K9GAG08B0M
K9LBG08U1M       FEATURES
• Voltage Supply
- 2.7V Device(K9F8G08B0M) : 2.5V ~ 2.9V
- 3.3V Device(K9F8G08U0M) : 2.7V ~ 3.6V
• Organization
- Memory Cell Array : (2G + 64M) x 8bit
- Data Register : (4K + 128) x 8bit
• Automatic Program and Erase
- Page Program : (4K + 128)Byte
- Block Erase : (512K + 16K)Byte
• Page Read Operation
- Page Size : (4K + 128)Byte
- Random Read : 60μs(Max.)
- Serial Access : 25ns(Min.)
• Memory Cell : 2bit / Memory Cell   • Fast Write Cycle Time
- Program time : 800μs(Typ.)
- Block Erase Time : 1.5ms(Typ.)
• Command/Address/Data Multiplexed I/O Port
• Hardware Data Protection
- Program/Erase Lockout During Power Transitions
• Reliable CMOS Floating-Gate Technology
- Endurance : TBD(with 4bit/512byte ECC)
- Data Retention : 10 Years
• Command Register Operation
• Unique ID for Copyright Protection
• Package :
- K9GAG08U0M-PCB0/PIB0 : Pb-FREE PACKAGE
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
- K9GAG08B0M-PCB0/PIB0 : Pb-FREE PACKAGE
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
- K9GAG08U0M-ICB0/IIB0
52 - Pin ULGA (12 x 17 / 1.00 mm pitch)
- K9LBG08U1M-ICB0/IIB0
52 - Pin ULGA (12 x 17 / 1.00 mm pitch)   Specification: Best service Good quality Competitive price Sufficient supply New and Original  Shipping: The items normally will be shipped out within 2-3 workdays after payment confirmed. It will be shipped by DHL/UPS/FEDEX/TNT/EMS or Other international shipping way. Any accidents and delays or other issues caused by forwarder, we will take no responsibility. Company information: THJ(HK) Technology limited is specialized in hard-to-find Integrated Circuits, Diodes & Transistors, MLCC Capacitors, Tantalum capacitors, Module, etc. (Please recheck the price and availability with sales before order!!!)  Please confirm with the sales about the details of the parts before you make an order. The price online is only for reference.   After sales service: Guarantee:30 days. If the items are defective please notify us within 3 days after arrival. Any items must be returned in their original condition to get a refund or replacement. Other information: MOQ:depends on your order. Sample:charged. Inventory:Changed ereryday and depends on your order. Order process: We will send you a PI after prices confirmed.

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